IXTM5N100

IXTM5N100 - IXYS

Part Number
IXTM5N100
Manufacturer
IXYS
Brief Description
POWER MOSFET TO-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IXTM5N100 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
16692 pcs
Reference Price
USD 0/pcs
Our Price
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IXTM5N100 Detailed Description

Part Number IXTM5N100
Part Status Last Time Buy
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.4 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
FET Feature -
Power Dissipation (Max) 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-204AA
Package / Case TO-204AA, TO-3
Weight -
Country of Origin -

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