IXT-1-1N100S1 - IXYS

Part Number	IXT-1-1N100S1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	1.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	-
Operating Temperature	-
Mounting Type	Surface Mount
Supplier Device Package	8-SOIC
Package / Case	8-SOIC
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	IXT-1-1N100S1	IXYS	MOSFET N-CH 1000V 1.5A 8-SOIC	Details
	IXT-1-1N100S1-TR	IXYS	MOSFET N-CH 1000V 1.5A 8-SOIC	Details