IXTF1N400 - IXYS

Part Number	IXTF1N400
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	4000V
Current - Continuous Drain (Id) @ 25°C	1A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2530pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	160W (Tc)
Rds On (Max) @ Id, Vgs	60 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS i4-PAC™
Package / Case	i4-Pac™-5 (3 leads)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXT-1-1N100S1	IXYS	MOSFET N-CH 1000V 1.5A 8-SOIC	Details
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