SPP03N60S5HKSA1 - Infineon Technologies

Part Number	SPP03N60S5HKSA1
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	3.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	5.5V @ 135µA
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	420pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	38W (Tc)
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 2A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3-1
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SPP03N60C3	INF	SPP03N60C3 INF TO-220 New Original Stocks	Details
SPP03N60C3HKSA1	Infineon Technologies	MOSFET N-CH 650V 3.2A TO-220AB	Details
SPP03N60C3XKSA1	Infineon Technologies	LOW POWER_LEGACY	Details
SPP03N60S5HKSA1	Infineon Technologies	MOSFET N-CH 600V 3.2A TO-220AB	Details
SPP03N60S5XKSA1	Infineon Technologies	LOW POWER_LEGACY	Details