SPI100N03S2L03 - Infineon Technologies

Part Number	SPI100N03S2L03
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	8180pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Rds On (Max) @ Id, Vgs	3 mOhm @ 80A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO262-3-1
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SPI100N03S2-03	Infineon Technologies	MOSFET N-CH 30V 100A I2PAK	Details
SPI100N03S2L-03	Infineon Technologies	MOSFET N-CH 30V 100A TO-262	Details
SPI100N03S2L03	Infineon Technologies	MOSFET N-CH 30V 100A TO-262	Details
SPI100N08S2-07	Infineon Technologies	MOSFET N-CH 75V 100A I2PAK	Details
SPI10N10	Infineon Technologies	MOSFET N-CH 100V 10.3A I2PAK	Details
SPI10N10L	Infineon Technologies	MOSFET N-CH 100V 10.3A I2PAK	Details