IRF40H210 - Infineon Technologies

Part Number	IRF40H210
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	6V, 10V
Vgs(th) (Max) @ Id	3.7V @ 150µA
Gate Charge (Qg) (Max) @ Vgs	152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5406pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	125W (Tc)
Rds On (Max) @ Id, Vgs	1.7 mOhm @ 100A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-PQFN (5x6)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

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