| Part Number | IPW65R041CFD |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 68.5A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 3.3mA |
| Gate Charge (Qg) (Max) @ Vgs | 300nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 500W (Tc) |
| Rds On (Max) @ Id, Vgs | 41 mOhm @ 33.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3 |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
 |
IPW60R017C7XKSA1 | Infineon Technologies | HIGH POWER_NEW | Details |
|
IPW60R018CFD7XKSA1 | Infineon Technologies | HIGH POWERNEW | Details |
 |
IPW60R031CFD7XKSA1 | Infineon Technologies | MOSFET N-CH 600V TO247-3 | Details |
|
IPW60R037CSFDXKSA1 | Infineon Technologies | HIGH POWERNEW | Details |
|
IPW60R037P7XKSA1 | Infineon Technologies | MOSFET N-CH 650V 76A TO247-3 | Details |
|
IPW60R040C7XKSA1 | Infineon Technologies | MOSFET N-CH 600V 50A TO247-3 | Details |
 |
IPW60R040CFD7XKSA1 | Infineon Technologies | HIGH POWERNEW | Details |
|
IPW60R041C6 | Infineon Technologies | MOSFET N-CH 600V 77.5A TO 247-3 | Details |
|
IPW60R041C6FKSA1 | Infineon Technologies | MOSFET N-CH 600V 77.5A TO 247-3 | Details |
|
IPW60R041P6FKSA1 | Infineon Technologies | MOSFET N-CH 600V 77.5A TO247-3 | Details |
