IPW60R037P7XKSA1 - Infineon Technologies

Part Number	IPW60R037P7XKSA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	76A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1.48mA
Gate Charge (Qg) (Max) @ Vgs	121nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5243pF @ 400V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	255W (Tc)
Rds On (Max) @ Id, Vgs	37 mOhm @ 29.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPW60R017C7XKSA1	Infineon Technologies	HIGH POWER_NEW	Details
IPW60R018CFD7XKSA1	Infineon Technologies	HIGH POWERNEW	Details
IPW60R031CFD7XKSA1	Infineon Technologies	MOSFET N-CH 600V TO247-3	Details
IPW60R037CSFDXKSA1	Infineon Technologies	HIGH POWERNEW	Details
IPW60R037P7XKSA1	Infineon Technologies	MOSFET N-CH 650V 76A TO247-3	Details
IPW60R040C7XKSA1	Infineon Technologies	MOSFET N-CH 600V 50A TO247-3	Details
IPW60R040CFD7XKSA1	Infineon Technologies	HIGH POWERNEW	Details
IPW60R041C6	Infineon Technologies	MOSFET N-CH 600V 77.5A TO 247-3	Details
IPW60R041C6FKSA1	Infineon Technologies	MOSFET N-CH 600V 77.5A TO 247-3	Details
IPW60R041P6FKSA1	Infineon Technologies	MOSFET N-CH 600V 77.5A TO247-3	Details