IPW60R041C6

IPW60R041C6 - Infineon Technologies

Part Number
IPW60R041C6
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 600V 77.5A TO 247-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
IPW60R041C6 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
2837 pcs
Reference Price
USD 12.9/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for IPW60R041C6

IPW60R041C6 Detailed Description

Part Number IPW60R041C6
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 77.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.5V @ 2.96mA
Gate Charge (Qg) (Max) @ Vgs 290nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 6530pF @ 10V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 481W (Tc)
Rds On (Max) @ Id, Vgs 41 mOhm @ 44.4A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3
Package / Case TO-247-3
Weight -
Country of Origin -

RELATED PRODUCTS FOR IPW60R041C6