IPN80R3K3P7ATMA1 - Infineon Technologies

Part Number	IPN80R3K3P7ATMA1
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	3.3 Ohm @ 590mA, 10V
Vgs(th) (Max) @ Id	3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs	5.8nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 500V
FET Feature	-
Power Dissipation (Max)	6.1W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IPN80R1K2P7ATMA1	Infineon Technologies	COOLMOS P7 800V SOT-223	Details
IPN80R1K4P7ATMA1	Infineon Technologies	LOW POWER_NEW	Details
IPN80R2K0P7ATMA1	Infineon Technologies	LOW POWER_NEW	Details
IPN80R2K4P7ATMA1	Infineon Technologies	COOLMOS P7 800V SOT-223	Details
IPN80R3K3P7ATMA1	Infineon Technologies	COOLMOS P7 800V SOT-223	Details
IPN80R4K5P7ATMA1	Infineon Technologies	LOW POWER_NEW	Details
IPN80R600P7ATMA1	Infineon Technologies	COOLMOS P7 800V SOT-223	Details
IPN80R750P7ATMA1	Infineon Technologies	COOLMOS P7 800V SOT-223	Details
IPN80R900P7ATMA1	Infineon Technologies	LOW POWER_NEW	Details