| Part Number | IPD60R180P7ATMA1 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 280µA |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1081pF @ 400V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 72W (Tc) |
| Rds On (Max) @ Id, Vgs | 180 mOhm @ 5.6A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO252-3 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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IPD60R145CFD7ATMA1 | Infineon Technologies | HIGH POWERNEW | Details |
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IPD60R170CFD7ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
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IPD60R180C7ATMA1 | Infineon Technologies | MOSFET N-CH TO252-3 | Details |
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IPD60R180P7ATMA1 | Infineon Technologies | MOSFET N-CH 650V 18A TO252-3 | Details |
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IPD60R180P7SAUMA1 | Infineon Technologies | CONSUMER | Details |
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IPD60R180P7SE8228AUMA1 | Infineon Technologies | CONSUMER | Details |
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IPD60R1K0CEATMA1 | Infineon Technologies | MOSFET N-CH 600V TO-252-3 | Details |
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IPD60R1K0CEAUMA1 | Infineon Technologies | CONSUMER | Details |
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IPD60R1K4C6 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | Details |
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IPD60R1K4C6ATMA1 | Infineon Technologies | MOSFET N-CH 600V 3.2A TO252-3 | Details |
