BSZ900N20NS3GATMA1

BSZ900N20NS3GATMA1 - Infineon Technologies

Part Number
BSZ900N20NS3GATMA1
Manufacturer
Infineon Technologies
Brief Description
MOSFET N-CH 200V 15.2A 8TSDSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
BSZ900N20NS3GATMA1 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
219397 pcs
Reference Price
USD 0.75046/pcs
Our Price
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BSZ900N20NS3GATMA1 Detailed Description

Part Number BSZ900N20NS3GATMA1
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 15.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 90 mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 920pF @ 100V
FET Feature -
Power Dissipation (Max) 62.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSDSON-8
Package / Case 8-PowerTDFN
Weight -
Country of Origin -

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