GA50JT06-258 - GeneSiC Semiconductor

Part Number	GA50JT06-258
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	769W (Tc)
Rds On (Max) @ Id, Vgs	25 mOhm @ 50A
Operating Temperature	-55°C ~ 225°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-258
Package / Case	TO-258-3, TO-258AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GA50JT06-258	GeneSiC Semiconductor	TRANS SJT 600V 100A	Details
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GA50JT12-263	GeneSiC Semiconductor	TRANSISTOR 1200V 100A TO263-7	Details
GA50JT17-247	GeneSiC Semiconductor	TRANS SJT 1.7KV 100A	Details
GA50K6A1A	TE Connectivity Measurement Specialties	NTC THERMISTOR 50K OHM 0.1C BEAD	Details
GA50SICP12-227	GeneSiC Semiconductor	SIC CO-PACK SJT/RECT 50A 1.2KV	Details
GA50TS120K	EXSHINE	Short Circuit Rated Ultra-FastTM Speed IGBT	Details
GA50TS120L	IR	GA50TS120L IR SMD or Through Hole New Original Stocks	Details
GA50TS120U	IR	GA50TS120U IR SMD or Through Hole New Original Stocks	Details