GA05JT12-247 - GeneSiC Semiconductor

Part Number	GA05JT12-247
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	106W (Tc)
Rds On (Max) @ Id, Vgs	280 mOhm @ 5A
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AB
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
GA05JT01-46	GeneSiC Semiconductor	TRANS SJT 100V 9A	Details
GA05JT03-46	GeneSiC Semiconductor	TRANS SJT 300V 9A	Details
GA05JT12-247	GeneSiC Semiconductor	TRANS SJT 1200V 5A	Details
GA05JT12-263	GeneSiC Semiconductor	TRANS SJT 1200V 15A	Details