2N7637-GA - GeneSiC Semiconductor

Part Number	2N7637-GA
Part Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc) (165°C)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	720pF @ 35V
Vgs (Max)	-
FET Feature	-
Power Dissipation (Max)	80W (Tc)
Rds On (Max) @ Id, Vgs	170 mOhm @ 7A
Operating Temperature	-55°C ~ 225°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-257
Package / Case	TO-257-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
2N7000	Fairchild/ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000,126	NXP USA Inc.	MOSFET N-CH 60V 300MA TO-92	Details
2N7000-D26Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-D74Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-D75Z	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details
2N7000-G	Microchip Technology	MOSFET N-CH 60V 0.2A TO92-3	Details
2N7000BU	Fairchild/ON Semiconductor	MOSFET N-CH 60V 0.2A TO-92	Details
2N7000BU_T	ON Semiconductor	MOSFET N-CH 60V TO92	Details
2N7000CSM	SEME-LAB	N.CHANNEL ENHANCEMENT MODE MOS TRANSISTOR	Details
2N7000G	ON Semiconductor	MOSFET N-CH 60V 200MA TO-92	Details