FDI9406_F085 - Fairchild/ON Semiconductor

Part Number	FDI9406_F085
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	110A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	138nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7710pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	176W (Tj)
Rds On (Max) @ Id, Vgs	2.2 mOhm @ 80A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
FDI9406-F085	ON Semiconductor	MOSFET N-CH 40V 110A TO262AB	Details
FDI9406_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V 110A TO262AB	Details
FDI9409-F085	ON Semiconductor	MOSFET N-CH 40V	Details
FDI9409_F085	Fairchild/ON Semiconductor	MOSFET N-CH 40V	Details