FDD3510H

FDD3510H - Fairchild/ON Semiconductor

Part Number
FDD3510H
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N/P-CH 80V 4.3A/2.8A DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
FDD3510H PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
54154 pcs
Reference Price
USD 0.4959/pcs
Our Price
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FDD3510H Detailed Description

Part Number FDD3510H
Part Status Active
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 4.3A, 2.8A
Rds On (Max) @ Id, Vgs 80 mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 800pF @ 40V
Power - Max 1.3W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package TO-252-4L
Weight -
Country of Origin -

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