FDB0260N1007L

FDB0260N1007L - Fairchild/ON Semiconductor

Part Number
FDB0260N1007L
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N-CH 100V 200A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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FDB0260N1007L PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
5861 pcs
Reference Price
USD 4.3265/pcs
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FDB0260N1007L Detailed Description

Part Number FDB0260N1007L
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 200A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 8545pF @ 50V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 27A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (7-Lead)
Package / Case TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Weight -
Country of Origin -

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