FDB029N06

FDB029N06 - Fairchild/ON Semiconductor

Part Number
FDB029N06
Manufacturer
Fairchild/ON Semiconductor
Brief Description
MOSFET N-CH 60V 120A D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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FDB029N06 PDF online browsing
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Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
40000 pcs
Reference Price
USD 2.5703/pcs
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FDB029N06 Detailed Description

Part Number FDB029N06
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 151nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 9815pF @ 25V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 231W (Tc)
Rds On (Max) @ Id, Vgs 3.1 mOhm @ 75A, 10V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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