EPC8009ENGR

EPC8009ENGR - EPC

Part Number
EPC8009ENGR
Manufacturer
EPC
Brief Description
TRANS GAN 65V 4.1A BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EPC8009ENGR PDF online browsing
Datasheet PDF Download
EPC8009ENGR.pdf
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4031 pcs
Reference Price
USD 0/pcs
Our Price
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EPC8009ENGR Detailed Description

Part Number EPC8009ENGR
Part Status Obsolete
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 65V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.38nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 47pF @ 32.5V
Vgs (Max) +6V, -5V
FET Feature -
Power Dissipation (Max) -
Rds On (Max) @ Id, Vgs 138 mOhm @ 500mA, 5V
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Die
Package / Case Die
Weight -
Country of Origin -

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