EPC2100ENGRT Detailed Description
Part Number |
EPC2100ENGRT |
Part Status |
Active |
FET Type |
2 N-Channel (Half Bridge) |
FET Feature |
GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) |
30V |
Current - Continuous Drain (Id) @ 25°C |
9.5A (Tj), 38A (Tj) |
Rds On (Max) @ Id, Vgs |
8 mOhm @ 25A, 5V, 2 mOhm @ 25A, 5V |
Vgs(th) (Max) @ Id |
2.5V @ 4mA,2.5V @ 16mA |
Gate Charge (Qg) (Max) @ Vgs |
3.5nC @ 15V, 15nC @ 15V |
Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 15V, 1700pF @ 15V |
Power - Max |
- |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
Die |
Supplier Device Package |
Die |
Weight |
- |
Country of Origin |
- |
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