HBDM60V600W-7

HBDM60V600W-7 - Diodes Incorporated

Part Number
HBDM60V600W-7
Manufacturer
Diodes Incorporated
Brief Description
TRANS NPN/PNP 65V/60V SOT363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
HBDM60V600W-7 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - Bipolar (BJT) - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
241919 pcs
Reference Price
USD 0.1089/pcs
Our Price
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HBDM60V600W-7 Detailed Description

Part Number HBDM60V600W-7
Part Status Active
Transistor Type NPN, PNP
Current - Collector (Ic) (Max) 500mA, 600mA
Voltage - Collector Emitter Breakdown (Max) 65V, 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 10mA, 100mA / 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 1V / 100 @ 150mA, 10V
Power - Max 200mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363
Weight -
Country of Origin -

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