DMN61D8LVTQ-7 - Diodes Incorporated

Part Number	DMN61D8LVTQ-7
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	630mA
Rds On (Max) @ Id, Vgs	1.8 Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	0.74nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	12.9pF @ 12V
Power - Max	820mW
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	TSOT-26
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN6140L-13	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT23	Details
DMN6140L-7	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT-23	Details
DMN6140LQ-13	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT23	Details
DMN6140LQ-7	Diodes Incorporated	MOSFET N-CH 60V 1.6A SOT23	Details
DMN61D8L-13	Diodes Incorporated	MOSFET N-CH 60V 0.47A SOT23	Details
DMN61D8L-7	Diodes Incorporated	MOSFET N-CH 60V 0.47A SOT23	Details
DMN61D8LQ-13	Diodes Incorporated	MOSFET N-CH 60V SOT23	Details
DMN61D8LQ-7	Diodes Incorporated	MOSFET N-CH 60V SOT23	Details
DMN61D8LVT-13	Diodes Incorporated	MOSFET 2N-CH 60V 0.63A TSOT26	Details
DMN61D8LVT-7	Diodes Incorporated	MOSFET 2N-CH 60V 0.63A TSOT26	Details