DMN3016LFDE-13 - Diodes Incorporated

Part Number	DMN3016LFDE-13
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25.1nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1415pF @ 15V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	730mW (Ta)
Rds On (Max) @ Id, Vgs	12 mOhm @ 11A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	U-DFN2020-6 (Type E)
Package / Case	6-UDFN Exposed Pad
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
DMN3005LK3	DIODES	DMN3005LK3 DIODES TO252-.. New Original Stocks	Details
DMN3005LK3-13	Diodes Incorporated	MOSFET N-CH 30V 14.5A TO252-3L	Details
DMN3007LSS-13	Diodes Incorporated	MOSFET N-CH 30V 16A 8-SOIC	Details
DMN3007LSSQ-13	Diodes Incorporated	MOSFET BVDSS: 25V 30V SO-8	Details
DMN3008SCP10-7	Diodes Incorporated	MOSFET BVDSS: 25V 30V X4-DSN3415	Details
DMN3008SFG-13	Diodes Incorporated	MOSFET N-CH 30V 17.6A POWERDI	Details
DMN3008SFG-7	Diodes Incorporated	MOSFET N-CH 30V 17.6A POWERDI	Details
DMN3008SFGQ-13	Diodes Incorporated	MOSFET NCH 30V 17.6A POWERDI	Details
DMN3008SFGQ-7	Diodes Incorporated	MOSFET NCH 30V 17.6A POWERDI	Details
DMN3009LFV-13	Diodes Incorporated	MOSFET N-CH 30V 60A POWERDI3333	Details