Company Profile - EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
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EPC2022ENGRT | TRANS GAN 100V 60A BUMPED DIE | Details |
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EPC2040ENGR | TRANS GAN 25V BUMPED DIE | Details |
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EPC2034ENGR | TRANS GAN 200V 31A BUMPED DIE | Details |
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EPC2033ENGR | TRANS GAN 150V 31A BUMPED DIE | Details |
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EPC2032ENGR | TRANS GAN 100V 48A BUMPED DIE | Details |
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EPC2031ENGR | TRANS GAN 60V 31A BUMPED DIE | Details |
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EPC2029ENGRT | TRANS GAN 80V 31A BUMPED DIE | Details |
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EPC2039ENGRT | TRANS GAN 80V 6.8A BUMPED DIE | Details |
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EPC2024ENGR | TRANS GAN 40V 60A BUMPED DIE | Details |
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EPC2032ENGRT | TRANS GAN 100V 48A BUMPED DIE | Details |
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EPC2020ENGR | TRANS GAN 60V 60A BUMPED DIE | Details |
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EPC2036ENGRT | MOSFET N-CH 100V 1.7A DIE | Details |
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EPC2029ENGR | TRANS GAN 80V 31A BUMPED DIE | Details |
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EPC2025 | TRANS GAN 300V 150MO BUMPED DIE | Details |
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EPC2015CENGR | TRANS GAN 40V 36A BUMPED DIE | Details |
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EPC2818 | TRANS GAN 150V 12A BUMPED DIE | Details |
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EPC2815 | TRANS GAN 40V 33A BUMPED DIE | Details |
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EPC2801 | TRANS GAN 100V 25A BUMPED DIE | Details |
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EPC8009ENGR | TRANS GAN 65V 4.1A BUMPED DIE | Details |
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EPC8004ENGR | TRANS GAN 40V 4.4A BUMPED DIE | Details |
