Company Profile - EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
| Image | Part Number | Description | View |
|---|---|---|---|
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EPC2051 | GANFET TRANS 100V DIE CU PILLAR | Details |
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EPC2031 | GANFET NCH 60V 31A DIE | Details |
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EPC2049ENGRT | GANFET TRANS 40V BUMPED DIE | Details |
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GAN FET BOOK-WIPO | TEXT WIRELESS POWER HANDBOOK | Details |
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EPC2107ENGRT | TRANS GAN 3N-CH 100V BUMPED DIE | Details |
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EPC2102ENGRT | MOSFET ARRAY 2N-CH 60V DIE | Details |
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EPC2101ENGRT | TRANS GAN ASYMMETRICAL HALF BRID | Details |
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EPC2103ENG | TRANS GAN 2N-CH 80V BUMPED DIE | Details |
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EPC2105ENG | TRANS GAN 2N-CH 80V BUMPED DIE | Details |
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EPC2104ENG | TRANS GAN 2N-CH 100V BUMPED DIE | Details |
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EPC2102ENG | TRANS GAN 2N-CH 60V BUMPED DIE | Details |
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EPC2101ENG | TRANS GAN 2N-CH 60V BUMPED DIE | Details |
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EPC2100ENG | TRANS GAN 2N-CH 30V BUMPED DIE | Details |
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EPC2108 | MOSFET 3N-CH 60V/100V 9BGA | Details |
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EPC2107 | MOSFET 3N-CH 100V 9BGA | Details |
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EPC2106ENGRT | TRANS GAN 2N-CH 100V BUMPED DIE | Details |
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EPC2108ENGRT | TRANS GAN 3N-CH BUMPED DIE | Details |
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EPC2110ENGRT | TRANS GAN 2N-CH 120V BUMPED DIE | Details |
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EPC2104ENGRT | MOSFET 2NCH 100V 23A DIE | Details |
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EPC2105ENGRT | MOSFET 2NCH 80V 9.5A DIE | Details |
