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Home › Product Categories › Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays › EPC2105ENG
EPC2105ENG

EPC2105ENG - EPC

Part Number
EPC2105ENG
Manufacturer
EPC
Brief Description
TRANS GAN 2N-CH 80V BUMPED DIE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
EPC2105ENG PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
4423 pcs
Reference Price
USD 0/pcs
Our Price
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EPC2105ENG Detailed Description

Part Number EPC2105ENG
Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Half Bridge)
FET Feature GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 9.5A, 38A
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 300pF @ 40V
Power - Max -
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Weight -
Country of Origin -

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