| Part Number | VS-6ESH06-M3/87A |
|---|---|
| Part Status | Active |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600V |
| Current - Average Rectified (Io) | 6A |
| Voltage - Forward (Vf) (Max) @ If | 1.8V @ 6A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 40ns |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-277, 3-PowerDFN |
| Supplier Device Package | TO-277A (SMPC) |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
VS-6ESH01-M3/86A | Vishay Semiconductor Diodes Division | DIODE 100V 6A TO277A | Details |
|
VS-6ESH01-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A TO277A | Details |
|
VS-6ESH01HM3/86A | Vishay Semiconductor Diodes Division | DIODE 100V 6A TO277A | Details |
|
VS-6ESH01HM3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A TO277A | Details |
|
VS-6ESH02-M3/86A | Vishay Semiconductor Diodes Division | DIODE 200V 6A TO277A | Details |
|
VS-6ESH02-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Details |
|
VS-6ESH02HM3/86A | Vishay Semiconductor Diodes Division | DIODE 200V 6A TO277A | Details |
|
VS-6ESH02HM3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Details |
|
VS-6ESH06-M3/86A | Vishay Semiconductor Diodes Division | DIODE 600V 6A TO277A | Details |
|
VS-6ESH06-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A TO277A | Details |
