| Número de pieza | VS-6ESH06-M3/87A |
|---|---|
| Estado de la pieza | Active |
| Tipo de diodo | Standard |
| Voltaje - DC Reverse (Vr) (Max) | 600V |
| Corriente - promedio rectificado (Io) | 6A |
| Voltaje - Adelante (Vf) (Máx) @ Si | 1.8V @ 6A |
| Velocidad | Fast Recovery =< 500ns, > 200mA (Io) |
| Tiempo de recuperación inversa (trr) | 40ns |
| Current - Reverse Leakage @ Vr | 5µA @ 600V |
| Capacitancia @ Vr, F | - |
| Tipo de montaje | Surface Mount |
| Paquete / caja | TO-277, 3-PowerDFN |
| Paquete de dispositivo del proveedor | TO-277A (SMPC) |
| Temperatura de funcionamiento - unión | -65°C ~ 175°C |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
|
VS-6ESH01-M3/86A | Vishay Semiconductor Diodes Division | DIODE 100V 6A TO277A | Detalles |
|
VS-6ESH01-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A TO277A | Detalles |
|
VS-6ESH01HM3/86A | Vishay Semiconductor Diodes Division | DIODE 100V 6A TO277A | Detalles |
|
VS-6ESH01HM3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 100V 6A TO277A | Detalles |
|
VS-6ESH02-M3/86A | Vishay Semiconductor Diodes Division | DIODE 200V 6A TO277A | Detalles |
|
VS-6ESH02-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Detalles |
|
VS-6ESH02HM3/86A | Vishay Semiconductor Diodes Division | DIODE 200V 6A TO277A | Detalles |
|
VS-6ESH02HM3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 200V 6A TO277A | Detalles |
|
VS-6ESH06-M3/86A | Vishay Semiconductor Diodes Division | DIODE 600V 6A TO277A | Detalles |
|
VS-6ESH06-M3/87A | Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 6A TO277A | Detalles |
