V10P6-M3/86A - Vishay Semiconductor Diodes Division

Part Number	V10P6-M3/86A
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	60V
Current - Average Rectified (Io)	4.3A
Voltage - Forward (Vf) (Max) @ If	590mV @ 10A
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	1.9mA @ 60V
Capacitance @ Vr, F	-
Mounting Type	Surface Mount
Package / Case	TO-277, 3-PowerDFN
Supplier Device Package	TO-277A (SMPC)
Operating Temperature - Junction	-40°C ~ 150°C
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
V10P10	VISHAY	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	Details
V10P10-E3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10-E3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10-M3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10HE3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10HE3/87A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10HM3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO277A	Details
V10P10HM3/87A	VISHAY	High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier	Details
V10P10HM3_A/H	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 10A TO277A	Details