SUM60030E-GE3 - Vishay Siliconix

Part Number	SUM60030E-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	7.5V, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	141nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	7910pF @ 40V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 30A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2Pak)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SUM60030E-GE3	Vishay Siliconix	MOSFET N-CH 80V 120A D2PAK	Details
SUM60N02-3M9P	VIS	SUM60N02-3M9P VIS TO-263 New Original Stocks	Details
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SUM60N04-12LT	VISHAY	Temperature Sensing MOSFET, N-Channel 40-V (D-S)	Details
SUM60N04-12LT-E3	VISHAY	SUM60N04-12LT-E3 VISHAY SOT263.. New Original Stocks	Details
SUM60N06-15	VISHAY	N-Channel 60-V (D-S) 175C MOSFET	Details
SUM60N08-07C	VISHAY	Current-Sensing Power MOSFETs	Details
SUM60N08-07T	VISHAY	MOSFET SPECIFICATIONS (TJ = 25 C UNLESS OTHERWISE NOTED)	Details