SQS850EN-T1_GE3

SQS850EN-T1_GE3 - Vishay Siliconix

Part Number
SQS850EN-T1_GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 60V 12A POWERPAK1212
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQS850EN-T1_GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
367350 pcs
Reference Price
USD 0.44821/pcs
Our Price
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SQS850EN-T1_GE3 Detailed Description

Part Number SQS850EN-T1_GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 21.5 mOhm @ 6.1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2021pF @ 30V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® 1212-8
Package / Case PowerPAK® 1212-8
Weight -
Country of Origin -

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