SQP10250E_GE3 - Vishay Siliconix

Part Number	SQP10250E_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	30 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4050pF @ 25V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQP100N04-3M6_GE3	Vishay Siliconix	MOSFET N-CH 40V 100A TO220AB	Details
SQP100P06-9M3L_GE3	Vishay Siliconix	MOSFET P-CH 60V 100A TO220AB	Details
SQP10250E_GE3	Vishay Siliconix	MOSFET N-CH 250V TO-220AB	Details
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