SQJA62EP-T1_GE3 - Vishay Siliconix

Part Number	SQJA62EP-T1_GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	85nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	5100pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	68W (Tc)
Rds On (Max) @ Id, Vgs	4.5 mOhm @ 10A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQJA60EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 30A POWERPAKSO-8	Details
SQJA62EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 60A SO8	Details
SQJA64EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 60V 15A POWERPAKSOL	Details
SQJA68EP-T1_GE3	Vishay Siliconix	MOSFET N-CH 100V 14A POWERPAKSO	Details