SQ2337ES-T1_GE3

SQ2337ES-T1_GE3 - Vishay Siliconix

Part Number
SQ2337ES-T1_GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CHAN 80V SOT23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SQ2337ES-T1_GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
104562 pcs
Reference Price
USD 0.2455/pcs
Our Price
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SQ2337ES-T1_GE3 Detailed Description

Part Number SQ2337ES-T1_GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 6V, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 3W (Tc)
Rds On (Max) @ Id, Vgs 290 mOhm @ 1A, 4.5V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package / Case TO-236-3, SC-59, SOT-23-3
Weight -
Country of Origin -

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