SIR188DP-T1-RE3

SIR188DP-T1-RE3 - Vishay Siliconix

Part Number
SIR188DP-T1-RE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CHAN 60V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIR188DP-T1-RE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
232397 pcs
Reference Price
USD 0.70848/pcs
Our Price
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SIR188DP-T1-RE3 Detailed Description

Part Number SIR188DP-T1-RE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 25.5A (Ta), 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Rds On (Max) @ Id, Vgs 3.85 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1920pF @ 30V
FET Feature -
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SO-8
Package / Case PowerPAK® SO-8
Weight -
Country of Origin -

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