SIR186DP-T1-RE3 Detailed Description
Part Number |
SIR186DP-T1-RE3 |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
Rds On (Max) @ Id, Vgs |
4.5 mOhm @ 15A, 10V |
Vgs(th) (Max) @ Id |
3.6V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
37nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1710pF @ 30V |
FET Feature |
- |
Power Dissipation (Max) |
57W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® SO-8 |
Package / Case |
PowerPAK® SO-8 |
Weight |
- |
Country of Origin |
- |
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