SIHU6N65E-GE3 - Vishay Siliconix

Part Number	SIHU6N65E-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	820pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	78W (Tc)
Rds On (Max) @ Id, Vgs	600 mOhm @ 3A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	IPAK (TO-251)
Package / Case	TO-251-3 Long Leads, IPak, TO-251AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHU6N62E-GE3	Vishay Siliconix	MOSFET N-CH 620V 6A TO-251	Details
SIHU6N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 6A IPAK	Details
SIHU6N80E-GE3	Vishay Siliconix	MOSFET N-CHAN 800V TO-251	Details