SIHG33N60E-GE3 - Vishay Siliconix

Part Number	SIHG33N60E-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3508pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Rds On (Max) @ Id, Vgs	99 mOhm @ 16.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHG30N60AEL-GE3	Vishay Siliconix	MOSFET N-CHAN 600V TO-247AC	Details
SIHG30N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC	Details
SIHG30N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC	Details
SIHG32N50D-E3	Vishay Siliconix	MOSFET N-CH 500V 30A TO-247AC	Details
SIHG32N50D-GE3	Vishay Siliconix	MOSFET N-CH 500V 30A TO-247AC	Details
SIHG33N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 33A TO247AC	Details
SIHG33N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO-247AC	Details
SIHG33N60EF-GE3	Vishay Siliconix	MOSFET N-CH 600V 33A TO-247AC	Details
SIHG33N65E-GE3	Vishay Siliconix	MOSFET N-CH 650V 32.4A TO-247AC	Details
SIHG33N65EF-GE3	Vishay Siliconix	MOSFET N-CH 650V 31.6A TO-247AC	Details