SIHG30N60AEL-GE3 - Vishay Siliconix

Part Number	SIHG30N60AEL-GE3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	120 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2565pF @ 100V
FET Feature	-
Power Dissipation (Max)	250W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHG30N60AEL-GE3	Vishay Siliconix	MOSFET N-CHAN 600V TO-247AC	Details
SIHG30N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC	Details
SIHG30N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V 29A TO247AC	Details