SIHD5N50D-GE3

SIHD5N50D-GE3 - Vishay Siliconix

Part Number
SIHD5N50D-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CH 500V 5.3A TO252 DPK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHD5N50D-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4282 pcs
Reference Price
USD 0/pcs
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SIHD5N50D-GE3 Detailed Description

Part Number SIHD5N50D-GE3
Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 100V
Vgs (Max) ±30V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 2.5A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight -
Country of Origin -

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