SIHA2N80E-GE3

SIHA2N80E-GE3 - Vishay Siliconix

Part Number
SIHA2N80E-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CHAN 800V TO-220 FULLPA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHA2N80E-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
187887 pcs
Reference Price
USD 0.87632/pcs
Our Price
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SIHA2N80E-GE3 Detailed Description

Part Number SIHA2N80E-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.75 Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19.6nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 315pF @ 100V
FET Feature -
Power Dissipation (Max) 29W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

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