SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3 - Vishay Siliconix

Part Number
SIA533EDJ-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N/P-CH 12V 4.5A SC70-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIA533EDJ-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Arrays
Delivery Time
1 Day
Date Code
New
Stock Quantity
111023 pcs
Reference Price
USD 0.2302/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SIA533EDJ-T1-GE3

SIA533EDJ-T1-GE3 Detailed Description

Part Number SIA533EDJ-T1-GE3
Part Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 4.5A
Rds On (Max) @ Id, Vgs 34 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 420pF @ 6V
Power - Max 7.8W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case PowerPAK® SC-70-6 Dual
Supplier Device Package PowerPAK® SC-70-6 Dual
Weight -
Country of Origin -

RELATED PRODUCTS FOR SIA533EDJ-T1-GE3