SI6413DQ-T1-GE3 - Vishay Siliconix

Part Number	SI6413DQ-T1-GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	800mV @ 400µA
Gate Charge (Qg) (Max) @ Vgs	105nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.05W (Ta)
Rds On (Max) @ Id, Vgs	10 mOhm @ 8.8A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSSOP
Package / Case	8-TSSOP (0.173", 4.40mm Width)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI6410DQ-T1-E3	Vishay Siliconix	MOSFET N-CH 30V 7.8A 8-TSSOP	Details
SI6410DQ-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 7.8A 8-TSSOP	Details
SI6413DQ	VIS	SI6413DQ VIS TSSOP8 New Original Stocks	Details
SI6413DQ-T1-E3	Vishay Siliconix	MOSFET P-CH 20V 7.2A 8TSSOP	Details
SI6413DQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 20V 7.2A 8TSSOP	Details
SI6415DQ	VIS	SI6415DQ VIS MSOP8 New Original Stocks	Details
SI6415DQ-T1-E3	Vishay Siliconix	MOSFET P-CH 30V 6.5A 8-TSSOP	Details
SI6415DQ-T1-GE3	Vishay Siliconix	MOSFET P-CH 30V 6.5A 8-TSSOP	Details