| Part Number | SI5511DC-T1-E3 |
|---|---|
| Part Status | Obsolete |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A, 3.6A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.8A, 4.5V |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 15V |
| Power - Max | 3.1W, 2.6W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Lead |
| Supplier Device Package | 1206-8 ChipFET™ |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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SI5511DC | VISHAY | N- and P-Channel 30-V (D-S) MOSFET | Details |
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SI5511DC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V 4A 1206-8 | Details |
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SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 4A 1206-8 | Details |
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SI5513CDC | VISHAY | N- and P-Channel 20-V (D-S) MOSFET | Details |
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SI5513CDC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | Details |
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SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | Details |
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SI5513DC | VISHAY | Complementary 20-V (D-S) MOSFET | Details |
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SI5513DC-T1 | VISHAYSIL | SI5513DC-T1 VISHAY/SIL POWERP.. New Original Stocks | Details |
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SI5513DC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 | Details |
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SI5513DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 | Details |
