| Número de pieza | SI5511DC-T1-E3 |
|---|---|
| Estado de la pieza | Obsolete |
| Tipo de FET | N and P-Channel |
| Característica FET | Logic Level Gate |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 4A, 3.6A |
| Rds On (Max) @ Id, Vgs | 55 mOhm @ 4.8A, 4.5V |
| Vgs (th) (Max) @ Id | 2V @ 250µA |
| Carga de puerta (Qg) (Max) @ Vgs | 7.1nC @ 5V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | 435pF @ 15V |
| Potencia - Max | 3.1W, 2.6W |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete / caja | 8-SMD, Flat Lead |
| Paquete de dispositivo del proveedor | 1206-8 ChipFET™ |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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SI5511DC | VISHAY | N- and P-Channel 30-V (D-S) MOSFET | Detalles |
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SI5511DC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 30V 4A 1206-8 | Detalles |
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SI5511DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 30V 4A 1206-8 | Detalles |
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SI5513CDC | VISHAY | N- and P-Channel 20-V (D-S) MOSFET | Detalles |
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SI5513CDC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | Detalles |
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SI5513CDC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 4A 1206-8 | Detalles |
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SI5513DC | VISHAY | Complementary 20-V (D-S) MOSFET | Detalles |
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SI5513DC-T1 | VISHAYSIL | SI5513DC-T1 VISHAY/SIL POWERP.. New Original Stocks | Detalles |
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SI5513DC-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 | Detalles |
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SI5513DC-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 3.1A 1206-8 | Detalles |
