SI4200DY-T1-GE3 Detailed Description
Part Number |
SI4200DY-T1-GE3 |
Part Status |
Active |
FET Type |
2 N-Channel (Dual) |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
25V |
Current - Continuous Drain (Id) @ 25°C |
8A |
Rds On (Max) @ Id, Vgs |
25 mOhm @ 7.3A, 10V |
Vgs(th) (Max) @ Id |
2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
415pF @ 13V |
Power - Max |
2.8W |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
8-SO |
Weight |
- |
Country of Origin |
- |
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