SI4200DY-T1-GE3 - Vishay Siliconix

Part Number	SI4200DY-T1-GE3
Part Status	Active
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	25V
Current - Continuous Drain (Id) @ 25°C	8A
Rds On (Max) @ Id, Vgs	25 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id	2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	415pF @ 13V
Power - Max	2.8W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SO
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI4200-BM	Silicon Labs	IC RF TXRX CELLULAR 32-VFQFN	Details
SI4200-BMR	SILICON	SI4200-BMR SILICON VQFN-3.. New Original Stocks	Details
SI4200-EVB	Silicon Labs	BOARD EVAL FOR SI4200	Details
SI4200-GM	Silicon Labs	IC RF TXRX CELLULAR 32-VFQFN	Details
SI4200BM	ORIGINAL	SI4200BM ORIGINAL SMD or Through Hole New Original Stocks	Details
SI4200DB-BM	SILICON	SI4200DB-BM SILICON QFN New Original Stocks	Details
SI4200DB-BRM	SAGEM	SI4200DB-BRM SAGEM SMD or Through Hole New Original Stocks	Details
SI4200DY	VIS	SI4200DY VIS SO-8 New Original Stocks	Details
SI4200DY-T1-E3	VISHAY	SI4200DY-T1-E3 VISHAY SOP8 New Original Stocks	Details
SI4200DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 25V 8A 8SOIC	Details