Part Number | SI3851DV-T1-E3 |
---|---|
Part Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 3.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | ±20V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 830mW (Ta) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.8A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-TSOP |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Weight | - |
Country of Origin | - |