| Número de pieza | SI3851DV-T1-E3 |
|---|---|
| Estado de la pieza | Active |
| Tipo de FET | P-Channel |
| Tecnología | MOSFET (Metal Oxide) |
| Drene a la fuente de voltaje (Vdss) | 30V |
| Corriente - Drenaje continuo (Id) a 25 ° C | 1.6A (Ta) |
| Voltaje de conducción (Rds máx. Encendidos, Rds mínimos activados) | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) |
| Carga de puerta (Qg) (Max) @ Vgs | 3.6nC @ 5V |
| Capacitancia de entrada (Ciss) (Max) @ Vds | - |
| Vgs (Max) | ±20V |
| Característica FET | Schottky Diode (Isolated) |
| Disipación de potencia (Máx) | 830mW (Ta) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 1.8A, 10V |
| Temperatura de funcionamiento | -55°C ~ 150°C (TJ) |
| Tipo de montaje | Surface Mount |
| Paquete de dispositivo del proveedor | 6-TSOP |
| Paquete / caja | SOT-23-6 Thin, TSOT-23-6 |
| Peso | - |
| País de origen | - |
| Imagen | Número de pieza | Fabricantes | Descripción | Ver |
|---|---|---|---|---|
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Si3850ADV | Vishay | Si3850ADV Vishay TSOP-6 New Original Stocks | Detalles |
|
SI3850ADV-T1-E3 | Vishay Siliconix | MOSFET N/P-CH 20V 1.4A 6TSOP | Detalles |
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SI3850ADV-T1-GE3 | Vishay Siliconix | MOSFET N/P-CH 20V 1.4A 6-TSOP | Detalles |
|
SI3850ADV_08 | VISHAY | Complementary MOSFET Half-Bridge (N- and P-Channel) | Detalles |
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SI3850DV | VISHAY | Complementary MOSFET Half-Bridge (N- and P-Channel) | Detalles |
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SI3850DV-T1-E3 | VISHAY | SI3850DV-T1-E3 VISHAY SOT-16.. New Original Stocks | Detalles |
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SI3850DV-T1-GE3 | VISHAY | SI3850DV-T1-GE3 VISHAY TSOP-6 New Original Stocks | Detalles |
|
SI3851DV | VIS | SI3851DV VIS SOT-26 New Original Stocks | Detalles |
|
SI3851DV-T1 | VISHAY | SI3851DV-T1 VISHAY SOT23-.. New Original Stocks | Detalles |
|
SI3851DV-T1-E3 | Vishay Siliconix | MOSFET P-CH 30V 1.6A 6-TSOP | Detalles |
